Invention Grant
- Patent Title: Vertical memory devices
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Application No.: US17349193Application Date: 2021-06-16
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Publication No.: US11889692B2Publication Date: 2024-01-30
- Inventor: Chang-Min Choi , Ju-Young Lim , Su-Jin Ahn
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. Chau & Associates, LLC
- Priority: KR 20150150764 2015.10.29
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H10B43/27 ; H10B41/27 ; H10B43/10 ; H10B43/20 ; H10B43/35 ; H10B43/40 ; H10B43/50 ; H01L23/528

Abstract:
A vertical memory device includes a substrate, a plurality of channels extending in a first direction substantially vertical to a top surface of the substrate, a plurality of gate lines surrounding a predetermined number of channels from among the channels, a plurality of common wirings electrically connected to the gate lines, and a plurality of signal wirings electrically connected to the gate lines via the common wirings. The gate lines are arranged and spaced apart from one another along the first direction. Each common wiring is electrically connected to a corresponding gate line at a same level of the corresponding gate line via a corresponding contact.
Public/Granted literature
- US20210313349A1 VERTICAL MEMORY DEVICES Public/Granted day:2021-10-07
Information query
IPC分类: