Invention Grant
- Patent Title: Programmable memory timing
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Application No.: US17562560Application Date: 2021-12-27
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Publication No.: US11894099B2Publication Date: 2024-02-06
- Inventor: Kang-Yong Kim , Hyun Yoo Lee , Timothy M. Hollis , Dong Soon Lim
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Colby Nipper PLLC
- Main IPC: G06F13/16
- IPC: G06F13/16 ; G11C7/22 ; G11C7/10 ; G06F3/06 ; G11C11/4093 ; G11C29/02 ; G11C29/10

Abstract:
Described apparatuses and methods enable communication between a host device and a memory device to establish relative delays between different data lines. If data signals propagate along a bus with the same timing, simultaneous switching output (SSO) and crosstalk can adversely impact channel timing budget parameters. An example system includes an interconnect having multiple data lines that couple the host device to the memory device. In example operations, the host device can transmit to the memory device a command indicative of a phase offset between two or more data lines of the multiple data lines. The memory device can implement the command by transmitting or receiving signals via the interconnect with different relative phase offsets between data lines. The host device (e.g., a memory controller) can determine appropriate offsets for a given apparatus. Lengths of the offsets can vary. Further, a system can activate the phase offsets based on frequency.
Public/Granted literature
- US20220206717A1 Programmable Memory Timing Public/Granted day:2022-06-30
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