- 专利标题： Gate-all-around monolithic stacked field effect transistors having multiple threshold voltages
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申请号： US17543028申请日： 2021-12-06
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公开(公告)号： US11894436B2公开(公告)日： 2024-02-06
- 发明人: Julien Frougier , Ruilong Xie , Nicolas Loubet , Andrew M. Greene , Veeraraghavan S. Basker , Balasubramanian S. Pranatharthiharan
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 David K. Mattheis
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/06 ; H01L29/66 ; H01L29/786
摘要：
A CFET (complementary field effect transistor) structure including a substrate, a first CFET formed above the substrate, and a second CFET formed above the substrate. The first CFET includes a top FET and a bottom FET. The top FET and bottom FET of the first CFET include at least one nanosheet channel. A gate affiliated with the first CFET and the second CFET devices includes a continuous horizontal dielectric over the entire length of the gate. The top FET of each CFET has a first polarity. The bottom FET of each a CFET comprises a second polarity. The top FET of the first CFET includes a first work function metal, and the top FET of the second CFET includes a second work function metal.
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