Invention Grant
- Patent Title: Resonant tunneling devices including two-dimensional semiconductor materials and methods of detecting physical properties using the same
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Application No.: US16811549Application Date: 2020-03-06
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Publication No.: US11894469B2Publication Date: 2024-02-06
- Inventor: Sanghyun Jo , Heejun Yang , Hyeonjin Shin , Shoujun Zheng
- Applicant: Samsung Electronics Co., Ltd. , RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Applicant Address: KR Suwon-si
- Assignee: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY,SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY,SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-do; KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR 20190050721 2019.04.30
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/88 ; H01L29/267 ; H01L29/04 ; H01L29/06 ; H01L29/24 ; H01L29/417 ; H01L29/66 ; H01L31/032 ; H01L29/16
Abstract:
A resonant tunneling device includes a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material, a first insulating layer on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material.
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