- 专利标题： Resonant tunneling devices including two-dimensional semiconductor materials and methods of detecting physical properties using the same
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申请号： US16811549申请日： 2020-03-06
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公开(公告)号： US11894469B2公开(公告)日： 2024-02-06
- 发明人: Sanghyun Jo , Heejun Yang , Hyeonjin Shin , Shoujun Zheng
- 申请人： Samsung Electronics Co., Ltd. , RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- 申请人地址： KR Suwon-si
- 专利权人： RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY,SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY,SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Gyeonggi-do; KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR 20190050721 2019.04.30
- 主分类号： H01L29/00
- IPC分类号： H01L29/00 ; H01L29/88 ; H01L29/267 ; H01L29/04 ; H01L29/06 ; H01L29/24 ; H01L29/417 ; H01L29/66 ; H01L31/032 ; H01L29/16
摘要：
A resonant tunneling device includes a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material, a first insulating layer on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material.
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