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公开(公告)号：US11894469B2
公开(公告)日：2024-02-06
申请号：US16811549
申请日：2020-03-06
发明人： Sanghyun Jo , Heejun Yang , Hyeonjin Shin , Shoujun Zheng
IPC分类号： H01L29/00 , H01L29/88 , H01L29/267 , H01L29/04 , H01L29/06 , H01L29/24 , H01L29/417 , H01L29/66 , H01L31/032 , H01L29/16
CPC分类号： H01L29/882 , H01L29/045 , H01L29/0657 , H01L29/1606 , H01L29/24 , H01L29/267 , H01L29/417 , H01L29/66977 , H01L31/032
摘要： A resonant tunneling device includes a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material, a first insulating layer on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material.
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公开(公告)号：US20200350442A1
公开(公告)日：2020-11-05
申请号：US16811549
申请日：2020-03-06
发明人： Sanghyun Jo , Heejun Yang , Hyeonjin Shin , Shoujun Zheng
IPC分类号： H01L29/88 , H01L29/267 , H01L29/66 , H01L47/00 , G01K7/16 , G01J1/42 , G01N27/22 , G01N27/04
摘要： A resonant tunneling device includes a first two-dimensional semiconductor layer including a first two-dimensional semiconductor material, a first insulating layer on the first two-dimensional semiconductor layer; and a second two-dimensional semiconductor layer on the first insulating layer and including a second two-dimensional semiconductor material of a same kind as the first two-dimensional semiconductor material.
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公开(公告)号：US10861996B2
公开(公告)日：2020-12-08
申请号：US16232489
申请日：2018-12-26
发明人： Sanghyun Jo , Heejun Yang , Geunwoo Hwang , Hyeonjin Shin
IPC分类号： H01L31/112 , H01L31/109 , H01L31/032 , H01L31/0224 , G06K9/00 , H01L31/101 , H01L31/113
摘要： A near infrared light sensor includes a 2D material semiconductor layer on a substrate, a tunneling layer on the 2D material semiconductor layer, and first and second electrodes on opposite edge regions of an upper surface of the tunneling layer. The 2D material semiconductor layer may be a TMDC layer having a thickness in a range of about 10 nm to about 100 nm. The tunneling layer and the substrate may each include hBN.
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公开(公告)号：US12132133B2
公开(公告)日：2024-10-29
申请号：US18338631
申请日：2023-06-21
发明人： Sanghyun Jo , Jaeho Lee , Haeryong Kim , Hyeonjin Shin
IPC分类号： H01L29/66 , G01S7/481 , G01S17/931 , H01L27/146 , H01L31/02 , H01L31/0224 , H01L31/028 , H01L31/032 , H01L31/0352 , H01L31/101 , H01L31/107 , H01S5/0687 , H10K39/32 , G05D1/00 , H01L31/0256 , H01L31/0296 , H01L31/0304 , H01L31/0312
CPC分类号： H01L31/1075 , G01S7/4816 , G01S7/4817 , G01S17/931 , H01L27/14643 , H01L27/14647 , H01L31/02027 , H01L31/022466 , H01L31/028 , H01L31/032 , H01L31/035209 , H01L31/035281 , H01L31/03529 , H01L31/1013 , H01S5/0687 , H10K39/32 , G05D1/024 , H01L31/0296 , H01L31/0304 , H01L31/0312 , H01L31/0324 , H01L2031/0344 , H01L31/035218
摘要： A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.
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公开(公告)号：US11888016B2
公开(公告)日：2024-01-30
申请号：US17555977
申请日：2021-12-20
发明人： Sanghyun Jo , Jaeho Lee , Eunkyu Lee , Seongjun Park , Kiyoung Lee , Jinseong Heo
IPC分类号： H01L27/146 , H01L31/0264 , B82Y15/00 , H01L31/074
CPC分类号： H01L27/14667 , H01L27/14636 , H01L31/0264 , H01L31/074 , B82Y15/00
摘要： Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.
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公开(公告)号：US11721781B2
公开(公告)日：2023-08-08
申请号：US17857466
申请日：2022-07-05
发明人： Sanghyun Jo , Jaeho Lee , Haeryong Kim , Hyeonjin Shin
IPC分类号： H01L21/76 , H01L23/48 , H01L31/107 , H01L31/02 , H01L31/0224 , H01L31/0352 , H01S5/0687 , G01S7/481 , H01L31/028 , H01L31/032 , H01L27/146 , H01L31/101 , G01S17/931 , H10K39/32 , H01L31/0304 , H01L31/0296 , H01L31/0312 , H01L31/0256 , G05D1/02
CPC分类号： H01L31/1075 , G01S7/4816 , G01S7/4817 , G01S17/931 , H01L27/14643 , H01L27/14647 , H01L31/028 , H01L31/02027 , H01L31/022466 , H01L31/032 , H01L31/03529 , H01L31/035209 , H01L31/035281 , H01L31/1013 , H01S5/0687 , H10K39/32 , G05D1/024 , G05D2201/0213 , H01L31/0296 , H01L31/0304 , H01L31/0312 , H01L31/0324 , H01L31/035218 , H01L2031/0344
摘要： A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.
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公开(公告)号：US11527646B2
公开(公告)日：2022-12-13
申请号：US17026665
申请日：2020-09-21
发明人： Jinseong Heo , Sangwook Kim , Yunseong Lee , Sanghyun Jo
摘要： A domain switching device includes a channel region, a source region and a drain region connected to the channel region, a gate electrode isolated from contact with the channel region, an anti-ferroelectric layer between the channel region and the gate electrode, a conductive layer between the gate electrode and the anti-ferroelectric layer to contact the anti-ferroelectric layer, and a barrier layer between the anti-ferroelectric layer and the channel region.
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公开(公告)号：US11417763B2
公开(公告)日：2022-08-16
申请号：US16682512
申请日：2019-11-13
发明人： Sangwook Kim , Yunseong Lee , Sanghyun Jo , Jinseong Heo
IPC分类号： H01L29/78 , H01L27/088 , H01L29/51 , H01L21/8234 , H01L21/28 , H01L29/66
摘要： An integrated circuit includes transistors respectively including channel layers in a substrate, source electrodes and drain electrodes respectively contacting both sides of the channel layers, gate electrodes on the channel layers, and ferroelectrics layers between the channel layers and the gate electrodes. Electrical characteristics of the ferroelectrics layers of at least two of the transistors are different. Accordingly, threshold voltages of the transistors are different from each other.
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公开(公告)号：US11177283B2
公开(公告)日：2021-11-16
申请号：US16893888
申请日：2020-06-05
发明人： Jinseong Heo , Yunseong Lee , Sanghyun Jo
摘要： Provided are an electronic device and a method of manufacturing the same. The electronic device may include a first device provided on a first region of a substrate; and a second device provided on a second region of the substrate, wherein the first device may include a first domain layer including a ferroelectric domain and a first gate electrode on the first domain layer, and the second device may include a second domain layer including a ferroelectric domain and a second gate electrode on the second domain layer. The first domain layer and the second domain layer may have different characteristics from each other at a polarization change according to an electric field. At the polarization change according to the electric field, the first domain layer may have substantially a non-hysteretic behavior characteristic and the second domain layer may have a hysteretic behavior characteristic.
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公开(公告)号：US20180197956A1
公开(公告)日：2018-07-12
申请号：US15825344
申请日：2017-11-29
发明人： Jaeho LEE , Hyeonjin Shin , Dongwook Lee , Seongjun Park , Kiyoung Lee , Eunkyu Lee , Sanghyun Jo , Jinseong Heo
IPC分类号： H01L29/16 , H01L31/0352 , H01L27/146 , H01L27/15 , H01L27/144 , H01L29/12
摘要： Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.
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