Invention Grant
- Patent Title: Magnetoresistive random access memory
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Application No.: US17987795Application Date: 2022-11-15
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Publication No.: US11895847B2Publication Date: 2024-02-06
- Inventor: Ting-Hsiang Huang , Yi-Chung Sheng , Sheng-Yuan Hsueh , Kuo-Hsing Lee , Chih-Kai Kang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 1910384092.0 2019.05.09
- Main IPC: H10B61/00
- IPC: H10B61/00 ; H10N50/10 ; H10N50/80

Abstract:
A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal interconnection includes an ellipse overlapping the circle.
Public/Granted literature
- US20230071086A1 MAGNETORESISTIVE RANDOM ACCESS MEMORY Public/Granted day:2023-03-09
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