- 专利标题: Method for fabricating semiconductor device with stacking structure
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申请号: US17563346申请日: 2021-12-28
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公开(公告)号: US11901350B2公开(公告)日: 2024-02-13
- 发明人: Tse-Yao Huang
- 申请人: NANYA TECHNOLOGY CORPORATION
- 申请人地址: TW New Taipei
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW New Taipei
- 代理机构: MUNCY, GEISSLER, OLDS & LOWE, P.C.
- 主分类号: H01L25/00
- IPC分类号: H01L25/00 ; H01L25/065 ; H01L25/10 ; H01L23/00 ; H01L23/498
摘要:
The present application discloses a method for fabricating a semiconductor device including providing a first stacking structure comprising a first controller die, and a plurality of first storage dies sequentially stacked on the first controller die; providing a second stacking structure comprising a second controller die, and a plurality of second storage dies sequentially stacked on the second controller die; bonding the first controller die onto a bottom die through a plurality of first interconnect units; and bonding the second controller die onto the bottom die through a plurality of second interconnect units. The plurality of first storage dies respectively comprise a plurality of first storage units configured as a floating array. The plurality of second storage dies comprise a plurality of second storage units respectively comprising an insulator-conductor-insulator structure.
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