- 专利标题： Method for manufacturing semiconductor structure
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申请号： US17816374申请日： 2022-07-29
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公开(公告)号： US11908700B2公开(公告)日： 2024-02-20
- 发明人: Nai-Han Cheng , Chi-Ming Yang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT LAW
- 代理商 Anthony King
- 分案原申请号： US14052973 2013.10.14
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065 ; H01J37/305 ; H01J37/317 ; H01J37/32
摘要：
In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes the following operations. A substrate including a first atom and a second atom is provided. An etchant is dispatched from an ionizer. A compound is formed over the substrate by bonding the first atom with the etchant. A particle is released from an implanter. The compound is removed by bombarding the compound with the particle having an energy smaller than a bonding energy between the first atom and the second atom, wherein the particle is different from the etchant.
公开/授权文献
- US20220367197A1 METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE 公开/授权日：2022-11-17
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