- 专利标题: Non-destructive gap metrology
-
申请号: US17696980申请日: 2022-03-17
-
公开(公告)号: US11913772B2公开(公告)日: 2024-02-27
- 发明人: Jianyong Mo , V Wade Singleton , Yiren Wu , Liang Zhang , David Wasinger
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Viering, Jentschura & Partner mbB
- 主分类号: G01B11/06
- IPC分类号: G01B11/06 ; G01B11/30
摘要:
The present disclosure is directed to a metrology system having 3-dimensional sensors for thickness measurements of semiconductor elements, and methods for taking the thickness measurements. In an aspect, the 3-dimensional sensor may be a single or dual 3-dimensional profiler that may scan across the top and bottom surfaces of an element to obtain a thickness measurement. In another aspect, the method may be used to measure a gap between elements that have assembled together.
公开/授权文献
- US20230296371A1 NON-DESTRUCTIVE GAP METROLOGY 公开/授权日:2023-09-21
信息查询