发明授权
- 专利标题: Semiconductor wafer
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申请号: US18196548申请日: 2023-05-12
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公开(公告)号: US11929229B2公开(公告)日: 2024-03-12
- 发明人: Florian Krippendorf , Constantin Csato
- 申请人: mi2-factory GmbH
- 申请人地址: DE Jena
- 专利权人: MI2-FACTORY GMBH
- 当前专利权人: MI2-FACTORY GMBH
- 当前专利权人地址: DE Jena
- 代理机构: LUCAS & MERCANTI, LLP
- 优先权: DE 2016122791 2016.11.25
- 分案原申请号: US17338933 2021.06.04
- 主分类号: H01J37/317
- IPC分类号: H01J37/317 ; C23C14/18 ; C23C14/48 ; H01J37/05 ; H01J37/147 ; H01J37/20 ; H01L21/04 ; H01L29/32
摘要:
A semiconductor wafer includes a first surface and an implantation area adjacent to the first surface and a certain distance away from the first surface, the implantation area including implanted particles and defects. A defect concentration in the implantation area deviates by less than 5% from a maximum defect concentration in the implantation area.
公开/授权文献
- US20230282439A1 SEMICONDUCTOR WAFER 公开/授权日:2023-09-07
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