Invention Grant
- Patent Title: Composite substrate and method of producing the composite substrate, and semiconductor device comprising the composite substrate
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Application No.: US17489595Application Date: 2021-09-29
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Publication No.: US11929294B2Publication Date: 2024-03-12
- Inventor: Masatsugu Ichikawa , Shoichi Yamada , Takeshi Kihara , Yutaka Matsusaka
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Foley & Lardner LLP
- Priority: JP 20165563 2020.09.30 JP 21124674 2021.07.29
- Main IPC: H01L23/14
- IPC: H01L23/14 ; H01L21/48 ; H01L23/373
Abstract:
A composite substrate includes a base layer formed of a composite material containing diamond and a metal, the base layer a first surface, and a second surface opposite to the first surface; a flat layer having a lower surface bonded to the first surface of the base layer, and an upper surface having a surface roughness Ra of 10 nm or less; and an insulating layer directly bonded to the upper surface of the flat layer.
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