- 专利标题: Method of polishing object to be polished containing material having silicon-silicon bond
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申请号: US17441587申请日: 2020-01-30
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公开(公告)号: US11939491B2公开(公告)日: 2024-03-26
- 发明人: Kohsuke Tsuchiya , Maki Asada , Satoshi Momota
- 申请人: FUJIMI INCORPORATED
- 申请人地址: JP Kiyosu
- 专利权人: FUJIMI INCORPORATED
- 当前专利权人: FUJIMI INCORPORATED
- 当前专利权人地址: JP Kiyosu
- 代理机构: FOLEY & LARDNER LLP
- 优先权: JP 19061177 2019.03.27 JP 19061187 2019.03.27
- 国际申请: PCT/JP2020/003548 2020.01.30
- 国际公布: WO2020/195149A 2020.10.01
- 进入国家日期: 2021-09-21
- 主分类号: C09G1/02
- IPC分类号: C09G1/02 ; H01L21/306
摘要:
The present invention provides means capable of achieving both a reduction in the number of defects and a reduction in haze in an object to be polished after polishing at a high level in a method of polishing the object to be polished containing a material having a silicon-silicon bond. The present invention relates to a method of polishing an object to be polished containing a material having a silicon-silicon bond, and the polishing method includes a final polishing step Pf. In this polishing method, the final polishing step Pf has a plurality of polishing sub-steps, the plurality of polishing sub-steps are continuously performed on the same polishing platen, a final polishing sub-step in the plurality of polishing sub-steps is a polishing sub-step Pff of polishing using a polishing composition Sff, a polishing sub-step provided before the polishing sub-step Pff in the plurality of polishing sub-steps is a polishing sub-step Pfp of polishing using a polishing composition Sfp, and the polishing composition Sff satisfies at least one of the following condition (A) or the following condition (B): condition (A): a value of a haze parameter of the polishing composition Sff obtained in a standard test 1 is smaller than a value of the haze parameter of the polishing composition Sfp obtained in the standard test 1, and condition (B): the polishing composition Sff contains an abrasive Aff, a basic compound Bff, and hydroxyethyl cellulose.
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