POLISHING COMPOSITION, POLISHING METHOD, AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE

    公开(公告)号:US20240218208A1

    公开(公告)日:2024-07-04

    申请号:US18543206

    申请日:2023-12-18

    IPC分类号: C09G1/02 C09K3/14

    CPC分类号: C09G1/02 C09K3/1436

    摘要: An object of the present invention is to provide means that can polish both silicon nitride and silicon oxide at a high polishing removal rate.
    The present invention provides a polishing composition including abrasive grains and an acidic compound. The abrasive grains are inorganic particles having an organic acid immobilized on a surface thereof. In a particle size distribution of the abrasive grains measured by a dynamic light scattering method, D90/D10 is 2.2 or more and D50 is 70 nm or more, where D10 is a particle diameter when a cumulative particle mass from a fine particle side reaches 10% of the total particle mass, D50 is a particle diameter when the cumulative particle mass from the fine particle side reaches 50% of the total particle mass, and D90 is a particle diameter when the cumulative particle mass from the fine particle side reaches 90% of the total particle mass.

    POLISHING METHOD AND POLISHING COMPOSITION
    2.
    发明公开

    公开(公告)号:US20240117218A1

    公开(公告)日:2024-04-11

    申请号:US18275285

    申请日:2022-02-02

    IPC分类号: C09G1/02

    CPC分类号: C09G1/02

    摘要: Provided are a polishing method and a polishing composition that are applied to polishing of silicon carbide and allows reduction of rise in pH of the polishing composition and increase in pad temperature during polishing. Provided is a method of polishing an object to be polished having a surface formed of silicon carbide. The method includes steps of preparing a polishing composition, and supplying the polishing composition to the object to be polished and polishing the object to be polished. The polishing composition contains permanganate, a metal salt A, and water. The metal salt A is a salt of a metal cation having a pKa of less than 7.0 in form of a hydrated metal ion, and an anion.

    POLISHING COMPOSITION
    3.
    发明公开

    公开(公告)号:US20240110080A1

    公开(公告)日:2024-04-04

    申请号:US18529763

    申请日:2023-12-05

    IPC分类号: C09G1/02

    CPC分类号: C09G1/02

    摘要: Provided is a polishing composition containing an abrasive, permanganate, an aluminum salt, and water. In the polishing composition, a relation of a content W1 [% by weight] of the abrasive, a concentration C1 [mM] of the permanganate, and a concentration C2 [mM] of the aluminum salt satisfies at least one condition of the following conditions [A], [B], and [C]:


    satisfying both of 500≤(C1/W1) and 0.04≤(C2/C1);  [A]



    satisfying both of 200≤(C1/√(W1)) and 8≤C2; and  [B]



    satisfying both of 500≤(C1/W1) and 8≤C2.  [C]

    POLISHING COMPOSITION AND POLISHING METHOD USING THE SAME

    公开(公告)号:US20240052203A1

    公开(公告)日:2024-02-15

    申请号:US18266750

    申请日:2021-11-10

    发明人: RYO WAKABAYASHI

    IPC分类号: C09G1/02

    CPC分类号: C09G1/02

    摘要: The present invention is to provide a means for reducing surface roughness (Ra) while maintaining a high polishing rate in polishing of an object to be polished containing a resin and a filler. A polishing composition of the present invention comprises alumina particles, colloidal silica particles, and a dispersing medium for use in polishing an object to be polished containing a resin and a filler, in which the alumina particles have an average particle size of less than 2.8 μm, and the colloidal silica particles have an average particle size less than the average particle size of the alumina particles.

    Polishing composition, polishing method, and method of producing semiconductor substrate

    公开(公告)号:US11884843B2

    公开(公告)日:2024-01-30

    申请号:US17901412

    申请日:2022-09-01

    发明人: Ryota Mae

    摘要: A polishing composition according to the present invention contains abrasive grains, a basic inorganic compound, an anionic water-soluble polymer, and a dispersing medium, in which a zeta potential of the abrasive grains is negative, an aspect ratio of the abrasive grains is 1.1 or less, in a particle size distribution of the abrasive grains obtained by a laser diffraction/scattering method, a ratio D90/D50 of a particle diameter D90 when an integrated particle mass reaches 90% of a total particle mass from a fine particle side to a particle diameter D50 when the integrated particle mass reaches 50% of the total particle mass from the fine particle side is more than 1.3, and the basic inorganic compound is an alkali metal salt.

    Method of producing anionically modified colloidal silica

    公开(公告)号:US11814294B2

    公开(公告)日:2023-11-14

    申请号:US17331728

    申请日:2021-05-27

    发明人: Ryota Mae

    IPC分类号: C01B33/14 C09K3/14

    摘要: There is provided a method of producing anionically modified colloidal silica capable of polishing a silicon nitride film at a high speed and suppressing a polishing speed of a silicon oxide film. A method of producing anionically modified colloidal silica includes ion exchanging raw colloidal silica using an ion exchange resin (ion exchange step); and anionically modifying ion-exchanged raw colloidal silica to obtain anionically modified colloidal silica (modification step).

    ABSORPTION METHOD AND MESOPOROUS ALUMINA USED FOR THE SAME

    公开(公告)号:US20230321628A1

    公开(公告)日:2023-10-12

    申请号:US18019663

    申请日:2021-08-05

    摘要: Provided is an absorption method of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table. The method includes: preparing mesoporous alumina that satisfies at least one of the following items:

    (1) a surface hydroxyl content is 3.5 mmol/g or more;
    (2) a low-temperature CO2 desorption amount in CO2 thermal desorption amount spectrometry is 5 µmol/g or more; and
    (3) a low-temperature NH3 desorption amount in NH3 thermal desorption amount spectrometry is 25 µmol/g or more; and
    bringing a liquid containing an absorption target element in contact with the mesoporous alumina to absorb the absorption target element in the mesoporous alumina. The absorption target element is at least one type selected from the group consisting of an element belonging to periods 4 to 6 and groups 3 to 15 of the periodic table.