Invention Grant
- Patent Title: Method of evaluating silicon wafer, method of evaluating silicon wafer manufacturing process, method of manufacturing silicon wafer, and silicon wafer
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Application No.: US16335059Application Date: 2017-06-14
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Publication No.: US11948819B2Publication Date: 2024-04-02
- Inventor: Keiichiro Mori
- Applicant: SUMCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SUMCO CORPORATION
- Current Assignee: SUMCO CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP 16191212 2016.09.29
- International Application: PCT/JP2017/021885 2017.06.14
- International Announcement: WO2018/061337A 2018.04.05
- Date entered country: 2019-03-20
- Main IPC: H01L21/67
- IPC: H01L21/67 ; B24B37/005 ; G01N21/95 ; G01N21/956 ; G01Q60/24 ; H01L21/66 ; H01L29/16 ; H01L29/34

Abstract:
Provided is a method of evaluating a silicon wafer, the method including a first determination that determines the presence or absence of an abnormality by inspecting a surface of an evaluation-target silicon wafer with a light scattering type surface inspection device; and a second determination that determines the presence or absence of an abnormality through observing, with an atomic force microscope, a region of the surface of the evaluation-target silicon wafer, where the presence of an abnormality has not been confirmed in the first determination.
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