- 专利标题: Iterative error correction in memory systems
-
申请号: US17843171申请日: 2022-06-17
-
公开(公告)号: US11949428B2公开(公告)日: 2024-04-02
- 发明人: Marco Sforzin , Di Hsien Ngu
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Wood IP LLC
- 主分类号: H03M13/09
- IPC分类号: H03M13/09 ; H03K19/173 ; H03M13/11
摘要:
A system and method for detecting and correcting memory errors in CXL components is presented. The method includes receiving, into a decoder, a memory transfer block (MTB), wherein the MTB comprises data and parity information, wherein the MTB is arranged in a first dimension and a second dimension. An error checking and a correction function on the MTB is performed using a binary hamming code logic within the decoder in the first dimension. An error checking and a correction function on the MTB is performed using a non-binary hamming code logic within the decoder in the second dimension. Further, the binary hamming code logic and the non-binary hamming code logic perform the error checking on the MTB simultaneously.
公开/授权文献
- US20230231573A1 ITERATIVE ERROR CORRECTION IN MEMORY SYSTEMS 公开/授权日:2023-07-20
信息查询
IPC分类: