Invention Grant
- Patent Title: Error correction memory device with fast data access
-
Application No.: US16858281Application Date: 2020-04-24
-
Publication No.: US11953988B2Publication Date: 2024-04-09
- Inventor: Scott E Schaefer , Aaron P. Boehm
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G11C11/22 ; H03M13/45 ; G06F3/06 ; G06F11/20 ; G06F13/00 ; G11C7/10 ; G11C11/4093 ; G11C29/52 ; H03M13/00 ; H03M13/19

Abstract:
Methods, systems, and devices for a memory device with an error correction memory device with fast data access are described. For example, during a read operation, a memory device may be configured to output the data indicated by the read operation concurrent with performing an error correction operation. If the memory device detects an error, the memory device may indicate the error to a host device and, in some cases, output the corrected data to the host device. During a write operation, the memory device may store error detection or correction information associated with data to be stored at the memory device. The memory device may, in some cases, store error detection or correction information generated by the host device.
Public/Granted literature
- US20200371873A1 ERROR CORRECTION MEMORY DEVICE WITH FAST DATA ACCESS Public/Granted day:2020-11-26
Information query