- 专利标题： Semiconductor device and manufacturing method thereof
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申请号： US17855804申请日： 2022-07-01
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公开(公告)号： US11955551B2公开(公告)日： 2024-04-09
- 发明人: Georgios Vellianitis , Gerben Doornbos , Marcus Van Dal
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： STUDEBAKER & BRACKETT PC
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; B82Y10/00 ; H01L21/8238 ; H01L21/84 ; H01L29/16 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/786
摘要：
A semiconductor device includes a gate-all-around field effect transistor (GAA FET). The GAA FET includes channel regions made of a first semiconductor material disposed over a bottom fin layer made of a second semiconductor material, and a source/drain region made of a third semiconductor material. The first semiconductor material is Si1-xGex, where 0.9≤x≤1.0, and the second semiconductor material is Si1-yGey, where y
公开/授权文献
- US20220336654A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2022-10-20
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