公开(公告)号：US11955551B2

公开(公告)日：2024-04-09

申请号：US17855804

申请日：2022-07-01

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Georgios Vellianitis ,  Gerben Doornbos ,  Marcus Van Dal

IPC分类号： H01L29/78 ,  B82Y10/00 ,  H01L21/8238 ,  H01L21/84 ,  H01L29/16 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

CPC分类号： H01L29/785 ,  H01L21/845 ,  H01L29/1608 ,  H01L29/41791 ,  H01L29/42356 ,  H01L29/66795 ,  H01L2029/7858

摘要： A semiconductor device includes a gate-all-around field effect transistor (GAA FET). The GAA FET includes channel regions made of a first semiconductor material disposed over a bottom fin layer made of a second semiconductor material, and a source/drain region made of a third semiconductor material. The first semiconductor material is Si1-xGex, where 0.9≤x≤1.0, and the second semiconductor material is Si1-yGey, where y