Invention Grant
- Patent Title: Semiconductor device having fin-type pattern with varying widths along a center vertical line thereof
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Application No.: US16751460Application Date: 2020-01-24
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Publication No.: US11956937B2Publication Date: 2024-04-09
- Inventor: Ki-Il Kim , Jung-Gun You , Gi-Gwan Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20150152968 2015.11.02
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238 ; H01L27/105 ; H01L29/78 ; H10B10/00
Abstract:
A semiconductor device can include a field insulating film on a substrate and a fin-type pattern of a particular material, on the substrate, having a first sidewall and an opposing second sidewall. The fin-type pattern can include a first portion of the fin-type pattern that protrudes from an upper surface of the field insulating film and a second portion of the fin-type pattern disposed on the first portion. A third portion of the fin-type pattern can be disposed on the second portion where the third portion can be capped by a top rounded surface of the fin-type pattern and the first sidewall can have an undulated profile that spans the first, second and third portions.
Public/Granted literature
- US20200161313A1 Semiconductor Devices Including FINFET Structures with Increased Gate Surface Public/Granted day:2020-05-21
Information query
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