- 专利标题: Thin film capacitor and manufacturing method therefor
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申请号: US17559189申请日: 2021-12-22
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公开(公告)号: US11967468B2公开(公告)日: 2024-04-23
- 发明人: Masahiro Hiraoka , Hitoshi Saita
- 申请人: TDK CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: TDK CORPORATION
- 当前专利权人: TDK CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: YOUNG LAW FIRM, P.C.
- 优先权: JP 20216643 2020.12.25
- 主分类号: H01G4/33
- IPC分类号: H01G4/33 ; H01G4/008 ; H01G4/012 ; H01G4/10
摘要:
Disclosed herein is a thin film capacitor that includes a capacitive insulating film having first and second surfaces opposite to each other, a first capacitive electrode covering the first surface of the capacitive insulating film, and a second capacitive electrode covering the second surface of the capacitive insulating film. The first capacitive electrode is made of less noble metal having a lower spontaneous potential than a metal constituting the second capacitive electrode. A minute defective portion existing in the capacitive insulating film is closed by an insulator derived from a metal constituting the first capacitive electrode.
公开/授权文献
- US20220208477A1 THIN FILM CAPACITOR AND MANUFACTURING METHOD THEREFO 公开/授权日:2022-06-30
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