- 专利标题: Device detecting abnormality of secondary battery and semiconductor device
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申请号: US17291000申请日: 2019-11-11
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公开(公告)号: US11973198B2公开(公告)日: 2024-04-30
- 发明人: Takanori Matsuzaki , Kei Takahashi , Takahiko Ishizu , Yuki Okamoto , Minato Ito
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Atsugi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP 18218885 2018.11.22 JP 18240093 2018.12.21
- 国际申请: PCT/IB2019/059650 2019.11.11
- 国际公布: WO2020/104885A 2020.05.28
- 进入国家日期: 2021-05-04
- 主分类号: H03K5/00
- IPC分类号: H03K5/00 ; H01M10/42 ; H01M50/569 ; H02J7/00 ; H03K5/01 ; H03K5/24
摘要:
A semiconductor device capable of detecting a micro-short circuit of a secondary battery is provided. The semiconductor device includes a first source follower, a second source follower, a transistor, a capacitor, and a comparator. A negative electrode potential and a positive electrode potential of the secondary battery are supplied to the semiconductor device, a first potential is input to the first source follower, and a second potential is input to the second source follower. A signal for controlling the conduction state of the transistor is input to a gate of the transistor, and an output potential of the first source follower related to the potential between the positive electrode and the negative electrode of the secondary battery is sampled. The comparator compares the sampled potential with an output potential of the second source follower, whereby the semiconductor device can deal with a secondary battery in which the potential between the positive electrode and the negative electrode is changed by charge and discharge.
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