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公开(公告)号：US09812517B2
公开(公告)日：2017-11-07
申请号：US15163072
申请日：2016-05-24
发明人： Minato Ito , Yasuhiro Jinbo
CPC分类号： H01L27/1259 , H01L27/124 , H01L27/1266 , H01L27/3216 , H01L27/3272 , H01L27/3276 , H01L27/3297 , H01L51/5265 , H01L51/56 , H01L2227/323
摘要： A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.
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公开(公告)号：US12132334B2
公开(公告)日：2024-10-29
申请号：US17292218
申请日：2019-11-12
发明人： Kei Takahashi , Yuki Okamoto , Minato Ito , Takahiko Ishizu , Hiroki Inoue , Shunpei Yamazaki
IPC分类号： H02J7/00 , H01M10/42 , H01M10/44 , H03K3/0231 , H03K17/082
CPC分类号： H02J7/00304 , H01M10/4264 , H01M10/44 , H02J7/0031 , H03K3/0231 , H03K17/0822
摘要： A semiconductor device with reduced power consumption is provided. The semiconductor device includes a node ND1, a node ND2, a resistor, a capacitor, and a comparison circuit. The resistor is electrically connected in series between one of a positive electrode and a negative electrode of a secondary battery and a first terminal. The resistor has a function of converting current flowing between the one of the positive electrode and the negative electrode of the secondary battery and the first terminal into a first voltage. The first voltage is added to a voltage of the node ND2 through the capacitor. The comparison circuit has a function of comparing a voltage of the node ND1 and the voltage of the node ND2. The comparison circuit outputs a signal that notifies detection of overcurrent when the voltage of the node ND2 is higher than the voltage of the node ND1.
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公开(公告)号：US11296701B2
公开(公告)日：2022-04-05
申请号：US17286094
申请日：2019-10-16
发明人： Kei Takahashi , Yuki Okamoto , Takahiko Ishizu , Minato Ito
IPC分类号： H03K19/018 , H03K19/0185
摘要： A semiconductor device capable of level shifting in a negative potential direction using an n-channel transistor is provided. The semiconductor device includes a first source follower, a second source follower, and a comparator. The first source follower is supplied with a second high power supply potential and a low power supply potential; the second source follower is supplied with a first high power supply potential and the low power supply potential; and a digital signal which expresses a high level or a low level using the second high power supply potential or the first high power supply potential is input to the first source follower. Here, the second high power supply potential is a potential higher than the first high power supply potential, and the first high power supply potential is a potential higher than the low power supply potential. The comparator compares output potentials of the first source follower and the second source follower and outputs a digital signal which expresses a high level or a low level using the first high power supply potential or the low power supply potential.
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公开(公告)号：US12101067B2
公开(公告)日：2024-09-24
申请号：US17614690
申请日：2020-05-22
发明人： Minato Ito , Hitoshi Kunitake , Takayuki Ikeda
IPC分类号： H03F3/45 , H01L27/12 , H01L29/786 , H10B12/00
CPC分类号： H03F3/45475 , H01L27/1225 , H01L27/1255 , H01L29/78648 , H01L29/7869 , H10B12/00 , H03F2203/45594
摘要： A semiconductor device that functions as a relay station and is reduced in size is provided. The semiconductor device includes an operational amplifier, a first transistor and a first capacitor that are electrically connected to a first input side of the operational amplifier, and a first resistor and a second resistor that are electrically connected to a second input side. The second resistor is electrically connected to an output side of the operational amplifier, a gate of the first transistor is electrically connected to a first power supply, the first resistor is electrically connected to a second power supply, and at least a transistor included in the operational amplifier has a region overlapping with the first transistor.
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公开(公告)号：US09343706B2
公开(公告)日：2016-05-17
申请号：US13999502
申请日：2014-03-05
发明人： Minato Ito , Kohei Yokoyama , Yusuke Nishido
CPC分类号： H01L51/529 , H01L27/322 , H01L27/3276 , H01L51/524 , H01L51/5246 , H01L2924/0002 , H01L2924/00
摘要： Provided is a device in which heat conduction from a sealant to a functional element is suppressed and whose bezel is slim. The sealing structure includes a first substrate, a second substrate whose surface over which a sealed component is provided faces the first substrate, and a frame-like sealant which seals a space between the first substrate and the second substrate with the first substrate and the second substrate. The second substrate includes a groove portion between the sealant and the sealed component. The groove portion is in a vacuum or includes a substance whose heat conductivity is lower than that of the second substrate.
摘要翻译： 提供了一种从密封剂到功能元件的热传导被抑制并且其表圈苗条的装置。 所述密封结构包括第一基板，其表面上设有密封部件的第二基板面对所述第一基板;以及框状密封剂，其利用所述第一基板密封所述第一基板和所述第二基板之间的空间，并且所述第二基板 基质。 第二基板包括在密封剂和密封部件之间的槽部。 槽部处于真空状态，或者包含导热率低于第二基板的物质。
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公开(公告)号：US11973198B2
公开(公告)日：2024-04-30
申请号：US17291000
申请日：2019-11-11
发明人： Takanori Matsuzaki , Kei Takahashi , Takahiko Ishizu , Yuki Okamoto , Minato Ito
CPC分类号： H01M10/425 , H01M50/569 , H02J7/0031 , H03K5/01 , H03K5/24 , H01M2010/4271 , H03K5/2427 , H03K5/2472
摘要： A semiconductor device capable of detecting a micro-short circuit of a secondary battery is provided. The semiconductor device includes a first source follower, a second source follower, a transistor, a capacitor, and a comparator. A negative electrode potential and a positive electrode potential of the secondary battery are supplied to the semiconductor device, a first potential is input to the first source follower, and a second potential is input to the second source follower. A signal for controlling the conduction state of the transistor is input to a gate of the transistor, and an output potential of the first source follower related to the potential between the positive electrode and the negative electrode of the secondary battery is sampled. The comparator compares the sampled potential with an output potential of the second source follower, whereby the semiconductor device can deal with a secondary battery in which the potential between the positive electrode and the negative electrode is changed by charge and discharge.
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公开(公告)号：US11714138B2
公开(公告)日：2023-08-01
申请号：US17294780
申请日：2019-11-12
发明人： Kei Takahashi , Yuki Okamoto , Minato Ito , Takahiko Ishizu
IPC分类号： H02J7/00 , G01R31/396 , H01M10/48
CPC分类号： G01R31/396 , H01M10/48 , H02J7/0042 , H02J7/00712
摘要： A semiconductor device that tests and/or monitors each of batteries provided in an assembled battery is provided. The semiconductor device includes a hysteresis comparator and a circuit, and the circuit has a function of setting a high-level side threshold voltage and a low-level side voltage of the hysteresis comparator. The circuit includes first and second capacitors. A first terminal of the first capacitor is electrically connected to a high-level side reference potential input terminal of the hysteresis comparator and a first terminal of the second capacitor is electrically connected to a low-level side reference potential input terminal of the hysteresis comparator. After a first reference potential is input to the high-level side reference potential input terminal and a second reference potential is input to the low-level side reference potential input terminal, a negative electrode of a cell is electrically connected to each second terminal of the first and second capacitors, whereby the potential of each first terminal of the first and second capacitors is changed.
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公开(公告)号：US10243012B2
公开(公告)日：2019-03-26
申请号：US15798459
申请日：2017-10-31
发明人： Minato Ito , Yasuhiro Jinbo
摘要： A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.
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公开(公告)号：US10141525B2
公开(公告)日：2018-11-27
申请号：US14746925
申请日：2015-06-23
发明人： Minato Ito , Kohei Yokoyama
摘要： A device in which warpage or distortion is less likely to occur even in a high-temperature or high-humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, and an element layer. The first flexible substrate includes an organic resin. The second flexible substrate includes an organic resin. The element layer is positioned between the first flexible substrate and the second flexible substrate. The element layer includes a light-emitting element. The light-emitting element emits light to the first flexible substrate side. The first flexible substrate has higher average transmittance of light having a wavelength of greater than or equal to 400 nm and less than or equal to 800 nm than the second flexible substrate.
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公开(公告)号：US09660006B2
公开(公告)日：2017-05-23
申请号：US15163072
申请日：2016-05-24
发明人： Minato Ito , Yasuhiro Jinbo
摘要： A method for manufacturing a display device, which does not easily damage an electrode, is provided. In the first step, a terminal electrode, a wiring, and a functional layer are provided over a first substrate; the terminal electrode, the wiring, and the functional layer are electrically connected to one another; an insulating layer is provided over the terminal electrode; a first layer is provided over the terminal electrode and the insulating layer; an adhesive layer is sandwiched between the first substrate and a second substrate; the second substrate and the adhesive layer include a first opening overlapping with part of the first layer; and the insulating layer includes a second opening inside the first opening in a top view. In the second step, part of the first layer is removed by emitting particles having a high sublimation property to the first layer, so that the terminal electrode is exposed.
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