Invention Grant
- Patent Title: Methods of fabricating capacitor and semiconductor device including the capacitor
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Application No.: US17376458Application Date: 2021-07-15
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Publication No.: US11990503B2Publication Date: 2024-05-21
- Inventor: Gabjin Nam , Youngbin Lee , Cheoljin Cho , Jaehyoung Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20210001055 2021.01.05
- Main IPC: H10B53/30
- IPC: H10B53/30 ; G11C11/22 ; H01L49/02

Abstract:
Provided is a method of fabricating a capacitor. The method of fabricating a capacitor may include forming a first electrode, forming a dielectric layer on the first electrode, forming a second electrode on the dielectric layer, and applying, between the first electrode and the second electrode, a voltage outside an operating voltage range applied during operation or a current outside an operating current range applied during operation.
Public/Granted literature
- US20220216296A1 METHODS OF FABRICATING CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR Public/Granted day:2022-07-07
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