-
公开(公告)号：US12029027B2
公开(公告)日：2024-07-02
申请号：US18205715
申请日：2023-06-05
发明人： Cheoljin Cho , Jaesoon Lim , Jaehyoung Choi , Jungmin Park
摘要： A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.
-
公开(公告)号：US11784213B2
公开(公告)日：2023-10-10
申请号：US17315947
申请日：2021-05-10
发明人： Jungmin Park , Hanjin Lim , Haeryong Kim , Younglim Park , Cheoljin Cho
IPC分类号： H01L49/02
CPC分类号： H01L28/60
摘要： An integrated circuit device including a first electrode layer including a first metal and having a first thermal expansion coefficient; a dielectric layer on the first electrode layer, the dielectric layer including a second metal oxide including a second metal that is different from the first metal, and having a second thermal expansion coefficient that is less than the first thermal expansion coefficient; and a first stress buffer layer between the first electrode layer and the dielectric layer, the first stress buffer layer including a first metal oxide including the first metal, and being formed due to thermal stress of the first electrode layer and thermal stress of the dielectric layer.
-
公开(公告)号：US11678476B2
公开(公告)日：2023-06-13
申请号：US17222006
申请日：2021-04-05
发明人： Cheoljin Cho , Jaesoon Lim , Jaehyoung Choi , Jungmin Park
IPC分类号： H10B12/00 , H01L27/108 , H01L49/02
CPC分类号： H01L27/10805 , H01L28/55 , H01L28/65
摘要： A capacitor and a DRAM device, the capacitor including a lower electrode; a dielectric layer structure on the lower electrode, the dielectric layer structure including a first zirconium oxide layer, a hafnium oxide layer, and a second zirconium oxide layer sequentially stacked; and an upper electrode on the dielectric layer structure, wherein the hafnium oxide layer has a tetragonal crystal phase or an orthorhombic crystal phase.
-
公开(公告)号：US20240224503A1
公开(公告)日：2024-07-04
申请号：US18542627
申请日：2023-12-16
发明人： Cheoljin Cho , Yukyung Shin , Changhwa Jung , Jieun Lee , Jayun Choi
IPC分类号： H10B12/00
CPC分类号： H10B12/315
摘要： A semiconductor device includes a substrate, a first electrode disposed above the substrate, a multilayer dielectric structure configured to cover the first electrode, and a second electrode configured to cover the multilayer dielectric structure. The multilayer dielectric structure includes a plurality of dielectric films, a first dielectric film of the plurality of dielectric films includes crystalline TiO2 or crystalline SrTiO3, and a second dielectric film of the plurality of dielectric films is in contact with the first dielectric film and includes a high-k dielectric film having a tetragonal crystal structure.
-
公开(公告)号：US20220084943A1
公开(公告)日：2022-03-17
申请号：US17235369
申请日：2021-04-20
发明人： Cheoljin Cho , Jungmin Park , Hanjin Lim , Jaehyoung Choi
IPC分类号： H01L23/528 , H01L23/532 , H01L21/768
摘要： A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode including an outer protective layer, a conductive layer between opposing sidewalls of the outer protective layer, and an inner protective layer between opposing sidewalls of the conductive layer, a first supporter pattern on a side surface of the lower electrode, the first supporter pattern including a supporter hole, a dielectric layer on a surface of each of the lower electrode and the first supporter pattern, and an upper electrode on the dielectric layer. The outer protective layer includes titanium oxide, the conductive layer includes titanium nitride, and the inner protective layer includes titanium silicon nitride. In a horizontal cross-sectional view, the outer protective layer has an arc shape that extends between the dielectric layer and the conductive layer.
-
公开(公告)号：US20240321938A1
公开(公告)日：2024-09-26
申请号：US18591310
申请日：2024-02-29
发明人： Cheoljin Cho , Yukyung Shin , Jieun Lee , Hanjin Lim , Changhwa Jung , Jayun Choi
IPC分类号： H10B12/00
CPC分类号： H01L28/55 , H10B12/482 , H10B12/488
摘要： A semiconductor device includes a lower electrode disposed on a substrate; a dielectric layer covering the lower electrode; and an upper electrode spaced apart from the lower electrode. The dielectric layer is disposed between the upper electrode and the lower electrode. A thickness of the dielectric layer is less than or equal to 6 nm, and a grain size in the dielectric layer is between 3 nm and 30 nm.
-
公开(公告)号：US20230209804A1
公开(公告)日：2023-06-29
申请号：US17935148
申请日：2022-09-26
发明人： Cheoljin Cho , Yukyung Shin , Changhwa Jung , Hyunjun Kim , Hanjin Lim
IPC分类号： H01L27/108
CPC分类号： H01L27/10814 , H01L27/10823
摘要： A capacitor is described. The capacitor includes a lower electrode, a dielectric layer structure disposed on the lower electrode, and an upper electrode disposed on the dielectric layer structure. The dielectric layer structure includes a first dielectric layer, a second dielectric layer contacting the first dielectric layer, and a third dielectric layer contacting the second dielectric layer. Each of the first to third dielectric layers includes a material with a crystalline structure. The second dielectric layer includes an oxide having ferroelectric or antiferroelectric properties, and the second dielectric layer includes a material in which at least two different crystal phases are mixed.
-
公开(公告)号：US20230005925A1
公开(公告)日：2023-01-05
申请号：US17702190
申请日：2022-03-23
发明人： Kyooho Jung , Dongkwan Baek , Cheoljin Cho
IPC分类号： H01L27/108
摘要： A capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. The insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. The insert layer may be between ones of the plurality of zirconium oxide layers. The capacitor may have a high capacitance and low leakage currents.
-
公开(公告)号：US11990503B2
公开(公告)日：2024-05-21
申请号：US17376458
申请日：2021-07-15
发明人： Gabjin Nam , Youngbin Lee , Cheoljin Cho , Jaehyoung Choi
摘要： Provided is a method of fabricating a capacitor. The method of fabricating a capacitor may include forming a first electrode, forming a dielectric layer on the first electrode, forming a second electrode on the dielectric layer, and applying, between the first electrode and the second electrode, a voltage outside an operating voltage range applied during operation or a current outside an operating current range applied during operation.
-
公开(公告)号：US20240164085A1
公开(公告)日：2024-05-16
申请号：US18416313
申请日：2024-01-18
发明人： Kyooho Jung , Dongkwan Baek , Cheoljin Cho
IPC分类号： H10B12/00
CPC分类号： H10B12/315 , H10B12/033 , H10B12/34
摘要： A capacitor may include a lower electrode, a dielectric layer structure on the lower electrode, and an upper electrode on the dielectric layer structure. The dielectric layer structure may include a plurality of dielectric layers and at least one insert layer structure between ones of the plurality of dielectric layers. The insert layer structure may include a plurality of zirconium oxide layers and at least one insert layer. The insert layer may be between ones of the plurality of zirconium oxide layers. The capacitor may have a high capacitance and low leakage currents.
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.015 秒)
