- 专利标题： Air gap in inner spacers and methods of fabricating the same in field-effect transistors
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申请号： US18055286申请日： 2022-11-14
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公开(公告)号： US11990529B2公开(公告)日： 2024-05-21
- 发明人: Chien Ning Yao , Bo-Feng Young , Sai-Hooi Yeong , Kuan-Lun Cheng , Chih-Hao Wang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/49
- IPC分类号： H01L29/49 ; H01L21/02 ; H01L21/28 ; H01L21/764 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/786
摘要：
A semiconductor structure includes a stack of semiconductor layers disposed over a substrate, a metal gate stack having a top portion disposed over the stack of semiconductor layers and a bottom portion interleaved with the stack of semiconductor layers, an inner spacer disposed on sidewalls of the bottom portion of the metal gate stack, an air gap enclosed in the inner spacer, and an epitaxial source/drain (S/D) feature disposed over the inner spacer and adjacent to the metal gate stack.
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