Invention Grant
- Patent Title: Image generation for examination of a semiconductor specimen
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Application No.: US17209086Application Date: 2021-03-22
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Publication No.: US11995848B2Publication Date: 2024-05-28
- Inventor: David Uliel , Yan Avniel , Bobin Mathew Skaria , Oz Fox-Kahana , Gal Daniel Gutterman , Atai Baldinger , Murad Muslimany , Erez Lidor
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06F18/22 ; G06T5/50 ; G06T7/00 ; G06T7/30 ; H01J37/26

Abstract:
There is provided a system and method of examination of a semiconductor specimen, comprising: obtaining a sequence of frames of an area of the specimen acquired by an electron beam tool configured to scan the area from a plurality of directions, the sequence comprising a plurality of sets of frames each acquired from a respective direction; and registering the plurality of sets of frames and generating an image of the specimen based on result of the registration, comprising: performing, for each direction, a first registration among the set of frames acquired therefrom, and combining the registered set of frames to generate a first composite frame, giving rise to a plurality of first composite frames respectively corresponding to the plurality of directions; and performing a second registration among the plurality of first composite frames, and combining the registered plurality of first composite frames to generate the image of the specimen.
Public/Granted literature
- US20220301196A1 IMAGE GENERATION FOR EXAMINATION OF A SEMICONDUCTOR SPECIMEN Public/Granted day:2022-09-22
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