A processing apparatus is provided. The processing apparatus includes a chamber and a carrier that is positioned in the chamber for holding a substrate. The processing apparatus further includes a gas inlet connected to the chamber. The gas inlet is configured to supply a process gas into the chamber. The processing apparatus also includes a coil module positioned around the chamber and configured to transfer the process gas into plasma. In addition, the processing apparatus includes a filter disposed in the chamber. The coil module is configured to change a position of the plasma between a first position and a second position, the first position is located between the gas inlet and the filter, and the second position is located between the filter and the carrier.