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公开(公告)号：US12014985B2
公开(公告)日：2024-06-18
申请号：US18342145
申请日：2023-06-27
发明人： Youngjae Kang , SangWoon Lee , Joungeun Yoo , Duseop Yoon
IPC分类号： H01L23/532 , H01L21/285 , H01L23/528 , H01L29/45
CPC分类号： H01L23/53204 , H01L21/2855 , H01L23/5283 , H01L29/45
摘要： A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:
Mn+1AXn Formula 1
In Formula 1, M, A, X, and n are as described in the specification.-
公开(公告)号：US11728270B2
公开(公告)日：2023-08-15
申请号：US17384023
申请日：2021-07-23
发明人： Youngjae Kang , SangWoon Lee , Joungeun Yoo , Duseop Yoon
IPC分类号： H01L23/532 , H01L23/528 , H01L21/285 , H01L29/45
CPC分类号： H01L23/53204 , H01L21/2855 , H01L23/5283 , H01L29/45
摘要： A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:
Mn+1AXn Formula 1
In Formula 1, M, A, X, and n are as described in the specification.-
公开(公告)号：US10656462B2
公开(公告)日：2020-05-19
申请号：US15712708
申请日：2017-09-22
发明人： Beom Seok Kim , Hyunseok Choi , Ju Hyun Kim , Masashi Tsuji , Sangah Gam , Joungeun Yoo
IPC分类号： G02F1/13357 , G02F1/13363 , G02F1/1335 , G02F1/1343
摘要： A liquid crystal display includes a light source and a liquid crystal panel, wherein the liquid crystal panel includes a first substrate on the light source, a second substrate facing the first substrate, a liquid crystal layer between the first substrate and the second substrate, a color conversion layer between the second substrate and the liquid crystal layer, and including a light emitting element configured to receive a first visible light from the light source and emit a second visible light, a first polarizing layer between the liquid crystal layer and the color conversion layer, and a first phase difference layer between the liquid crystal layer and the first polarizing layer.
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公开(公告)号：US11649338B2
公开(公告)日：2023-05-16
申请号：US16726544
申请日：2019-12-24
发明人： Joungeun Yoo , Eun Sung Lee , Sung Dug Kim , Hyoungwoo Choi
IPC分类号： H01M4/02 , C08K3/22 , C08L23/06 , C09K19/38 , H01M50/138 , H01M50/112 , H01M50/107 , H01M50/105 , H01M50/103 , H01M50/119
CPC分类号： C08K3/22 , C08L23/06 , C09K19/38 , H01M50/138 , C08K2003/2206 , C08K2003/2217 , H01M50/103 , H01M50/105 , H01M50/107 , H01M50/112 , H01M50/119
摘要： A composite including a base polymer and a surface-treated inorganic moisture absorbent. The surface-treated inorganic moisture absorbent is surface-treated with a surface-treating agent having a solubility parameter difference of less than or equal to about 3.5 from that of the base polymer. An article including the composite, a battery case including the composite or the article, and a battery including the battery case and an electrode assembly including a positive electrode and a negative electrode.
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公开(公告)号：US20200347485A1
公开(公告)日：2020-11-05
申请号：US16776729
申请日：2020-01-30
发明人： Eunsung LEE , Duseop Yoon , Joungeun Yoo , Dohyang Kim
摘要： A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.
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公开(公告)号：US11114616B2
公开(公告)日：2021-09-07
申请号：US16550476
申请日：2019-08-26
发明人： Eunsung Lee , Duseop Yoon , Joungeun Yoo
摘要： Provided are a titanium-based amorphous alloy and a phase-change memory device in which the titanium-based amorphous alloy is applied to a phase-change layer. The titanium-based amorphous alloy may include titanium, antimony, and at least one metallic component. The titanium-based amorphous alloy may be configured as a phase-change material having a reversible phase change between a titanium-based amorphous alloy phase and at least one crystalline phase.
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公开(公告)号：US10964971B2
公开(公告)日：2021-03-30
申请号：US16225795
申请日：2018-12-19
发明人： Feifei Fang , In Ki Kim , Kyeong Pang , Joungeun Yoo , In Su Lee , Ginam Kim , In Kim , Hyoungwoo Choi
摘要： A battery casing including a container configured to house an electrode assembly, wherein the container includes a bottom wall and a plurality of side walls, the bottom wall and the plurality of side walls are integrated to define an open side opposite to the bottom wall and to define a space for housing the electrode assembly, at least one of the bottom wall and plurality of the side walls includes a composite including a thermotropic liquid crystal polymer and a nanoclay dispersed in the thermotropic liquid crystal polymer, wherein the main chain of the thermotropic liquid crystal polymer includes an aromatic oxycarbonyl repeating unit and an alkylene moiety-containing repeating unit, and at least a portion of the nanoclay is present in an exfoliated state, and an X-ray diffraction pattern of the composite does not exhibit an intrinsic peak corresponding to the nanoclay.
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公开(公告)号：US10247867B2
公开(公告)日：2019-04-02
申请号：US15242862
申请日：2016-08-22
发明人： Joungeun Yoo , Dmitry Androsov , Changki Kim , Kitae Park
IPC分类号： C08G73/10 , G02B5/30 , C07C211/51 , C07C229/60 , C08J5/18
摘要： A monomer represented by Chemical Formula 1-1 wherein in Chemical Formula 1-1, Z, L1, L2, R1 to R6, n, m, p, and a to f are the same as defined in the detailed description.
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公开(公告)号：US11830814B2
公开(公告)日：2023-11-28
申请号：US17376624
申请日：2021-07-15
发明人： Joungeun Yoo , Youngjae Kang , Duseop Yoon
IPC分类号： H01L23/532 , C22C29/14
CPC分类号： H01L23/53209 , C22C29/14 , H01L23/53257 , B22F2302/35
摘要： Provided are a wiring material for a semiconductor device, the wiring material including a boride-based compound containing boron and at least one metal selected from elements of Groups 2 to 14, a wiring for a semiconductor device including the same, and a semiconductor device including the wiring containing the wiring material.
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公开(公告)号：US11634793B2
公开(公告)日：2023-04-25
申请号：US16776729
申请日：2020-01-30
发明人： Eunsung Lee , Duseop Yoon , Joungeun Yoo , Dohyang Kim
摘要： A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.
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