- 专利标题： Semiconductor interconnect, electrode for semiconductor device, and method of preparing multielement compound thin film
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申请号： US18342145申请日： 2023-06-27
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公开(公告)号： US12014985B2公开(公告)日： 2024-06-18
- 发明人: Youngjae Kang , SangWoon Lee , Joungeun Yoo , Duseop Yoon
- 申请人： Samsung Electronics Co., Ltd. , AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.,AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- 当前专利权人： Samsung Electronics Co., Ltd.,AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- 当前专利权人地址： KR Gyeonggi-do; KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR 20200093380 2020.07.27 KR 20210034244 2021.03.16
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L21/285 ; H01L23/528 ; H01L29/45
摘要：
A semiconductor interconnect and an electrode for semiconductor devices may include a thin film including a multielement compound represented by Formula 1 and having a thickness equal to or less than about 50 nm, a grain size (A) to thickness (B) ratio (A/B) equal to or greater than about 1.2, and a resistivity equal to or less than about 200 μΩ·cm:
Mn+1AXn Formula 1
In Formula 1, M, A, X, and n are as described in the specification.
Mn+1AXn Formula 1
In Formula 1, M, A, X, and n are as described in the specification.
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