- 专利标题： Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device
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申请号： US17582656申请日： 2022-01-24
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公开(公告)号： US12018387B2公开(公告)日： 2024-06-25
- 发明人: Saurabh Roy , Matteo Dainese , Michael Ehmann , Hiroshi Narahashi , Johanna Schlaminger , Katharina Teichmann , Sigrid Wabnig
- 申请人： Infineon Technologies Austria AG
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 优先权： EP 153306 2021.01.25
- 主分类号： C23F1/44
- IPC分类号： C23F1/44 ; H01L21/3213
摘要：
A method for fabricating a semiconductor device comprises depositing a TiW layer on a semiconductor substrate, depositing a Ti layer on the TiW layer, depositing a Ni alloy layer on the Ti layer, depositing an Ag layer on the Ni alloy layer, at least partially covering the Ag layer with photoresist, wet etching the Ag layer and the Ni alloy layer, and dry etching the Ti layer and the TiW layer.
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