专利检索 ap:("Infineon Technologies Austria AG") AND inv:"Sigrid Wabnig" 第 1 页

1.

发明公开
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING WET ETCHING AND DRY ETCHING AND SEMICONDUCTOR DEVICE 审中-公开

公开(公告)号：US20240318320A1

公开(公告)日：2024-09-26

申请号：US18731567

申请日：2024-06-03

申请人： Infineon Technologies Austria AG

发明人： Saurabh Roy , Matteo Dainese , Michael Ehmann , Hiroshi Narahashi , Johanna Schlaminger , Katharina Teichmann , Sigrid Wabnig

IPC分类号： C23F1/44 , H01L21/3213

CPC分类号： C23F1/44 , H01L21/32134

摘要： A semiconductor device includes a semiconductor substrate, a TiW layer arranged on the semiconductor substrate a Ti layer arranged on the TiW layer, a Ni alloy layer arranged on the Ti layer, and an Ag layer arranged on the Ni alloy layer, wherein the Ag layer and the Ni alloy layer comprise side faces fabricated by at least one wet etching process, and wherein the Ti layer and the TiW layer comprise side faces fabricated by a dry etching process.

2.

发明授权
Method for fabricating a semiconductor device using wet etching and dry etching and semiconductor device 有权

公开(公告)号：US12018387B2

公开(公告)日：2024-06-25

申请号：US17582656

申请日：2022-01-24

申请人： Infineon Technologies Austria AG

发明人： Saurabh Roy , Matteo Dainese , Michael Ehmann , Hiroshi Narahashi , Johanna Schlaminger , Katharina Teichmann , Sigrid Wabnig

IPC分类号： C23F1/44 , H01L21/3213

CPC分类号： C23F1/44 , H01L21/32134

摘要： A method for fabricating a semiconductor device comprises depositing a TiW layer on a semiconductor substrate, depositing a Ti layer on the TiW layer, depositing a Ni alloy layer on the Ti layer, depositing an Ag layer on the Ni alloy layer, at least partially covering the Ag layer with photoresist, wet etching the Ag layer and the Ni alloy layer, and dry etching the Ti layer and the TiW layer.

3.

发明申请
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING WET ETCHING AND DRY ETCHING AND SEMICONDUCTOR DEVICE 有权

公开(公告)号：US20220235470A1

公开(公告)日：2022-07-28

申请号：US17582656

申请日：2022-01-24

申请人： Infineon Technologies Austria AG

发明人： Saurabh Roy , Matteo Dainese , Michael Ehmann , Hiroshi Narahashi , Johanna Schlaminger , Katharina Teichmann , Sigrid Wabnig

IPC分类号： C23F1/44 , H01L21/3213

摘要： A method for fabricating a semiconductor device comprises depositing a TiW layer on a semiconductor substrate, depositing a Ti layer on the TiW layer, depositing a Ni alloy layer on the Ti layer, depositing an Ag layer on the Ni alloy layer, at least partially covering the Ag layer with photoresist, wet etching the Ag layer and the Ni alloy layer, and dry etching the Ti layer and the TiW layer.