- 专利标题: Mask blanks and methods for depositing layers on mask blank
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申请号: US18084301申请日: 2022-12-19
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公开(公告)号: US12019367B2公开(公告)日: 2024-06-25
- 发明人: Hsin-Chang Lee , Pei-Cheng Hsu , Ta-Cheng Lien , Wen-Chang Hsueh
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW Hsinchu
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW Hsinchu
- 代理机构: STUDEBAKER & BRACKETT PC
- 主分类号: G03F1/24
- IPC分类号: G03F1/24 ; G03F1/48 ; G03F1/54
摘要:
A reflective mask blank includes a substrate, a reflective multilayer (RML) disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer has length or width dimensions smaller than the capping layer, and part of the capping layer is exposed by the absorber layer. The dimension of the absorber layer and the hard mask layer ranges between 146 cm to 148 cm. The dimensions of the substrate, the RML, and the capping layer range between 150 cm to 152 cm.
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