- 专利标题: Semiconductor device with a capacitor and a plurality of overlapping openings in the conductive layers
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申请号: US16830675申请日: 2020-03-26
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公开(公告)号: US12027535B2公开(公告)日: 2024-07-02
- 发明人: Atsushi Umezaki
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP 14150532 2014.07.24
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H01L29/786 ; G06F3/041 ; G09G3/20 ; G11C19/28 ; G11C27/04 ; H01L21/8226 ; H01L27/02
摘要:
The circuit includes a first transistor; a second transistor whose first terminal is connected to a gate of the first transistor for setting the potential of the gate of the first transistor to a level at which the first transistor is turned on; a third transistor for setting the potential of a gate of the second transistor to a level at which the second transistor is turned on and bringing the gate of the second transistor into a floating state; and a fourth transistor for setting the potential of the gate of the second transistor to a level at which the second transistor is turned off. With such a configuration, a potential difference between the gate and a source of the second transistor can be kept at a level higher than the threshold voltage of the second transistor, so that operation speed can be improved.
公开/授权文献
- US20200243569A1 Semiconductor Device and Electronic Device 公开/授权日:2020-07-30
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