- 专利标题： Semiconductor structure having dielectric structure extending into second cavity of semiconductor Fin
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申请号： US17325622申请日： 2021-05-20
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公开(公告)号： US12027608B2公开(公告)日： 2024-07-02
- 发明人: Ryan Chia-Jen Chen , Li-Wei Yin , Tzu-Wen Pan , Cheng-Chung Chang , Shao-Hua Hsu , Yi-Chun Chen , Yu-Hsien Lin , Ming-Ching Chang
- 申请人： DO NOT USE—Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/8238 ; H01L27/092 ; H01L29/10 ; H01L29/78 ; H01L21/84 ; H01L27/12
摘要：
Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.
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