公开(公告)号：US12027608B2

公开(公告)日：2024-07-02

申请号：US17325622

申请日：2021-05-20

申请人： DO NOT USE—Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Ryan Chia-Jen Chen ,  Li-Wei Yin ,  Tzu-Wen Pan ,  Cheng-Chung Chang ,  Shao-Hua Hsu ,  Yi-Chun Chen ,  Yu-Hsien Lin ,  Ming-Ching Chang

IPC分类号： H01L29/66 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L29/78 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L29/66795 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/1054 ,  H01L29/785 ,  H01L21/845 ,  H01L27/1211

摘要： Methods of cutting fins, and structures formed thereby, are described. In an embodiment, a structure includes a first fin and a second fin on a substrate, and a fin cut-fill structure disposed between the first fin and the second fin. The first fin and the second fin are longitudinally aligned. The fin cut-fill structure includes a liner on a first sidewall of the first fin, and an insulating fill material on a sidewall of the liner and on a second sidewall of the first fin. The liner is further on a surface of the first fin between the first sidewall of the first fin and the second sidewall of the first fin.