Invention Grant
- Patent Title: Semiconductor device and electronic device
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Application No.: US17557138Application Date: 2021-12-21
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Publication No.: US12033922B2Publication Date: 2024-07-09
- Inventor: Akihiro Fukatsu , Noboru Nagase , Toshihiro Nagaya
- Applicant: DENSO CORPORATION
- Applicant Address: JP Kariya
- Assignee: DENSO CORPORATION
- Current Assignee: DENSO CORPORATION
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP 19128733 2019.07.10
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L23/31 ; H01L25/07 ; H01L25/16 ; H02M1/08 ; H02M7/537 ; H02P27/06 ; H05K1/18

Abstract:
A semiconductor device includes: first and second semiconductor elements each having two electrodes respectively disposed on two surfaces; two first terminals respectively connected to the two electrodes of the first semiconductor element and arranged side by side in one direction; two second terminals respectively connected to the two electrodes of the second semiconductor element, and arranged side by side in the one direction to be adjacent to the two first terminals; and a sealing resin portion covering the first and second semiconductor elements and the first and second terminals in a state where facing surfaces of the first and second terminals are exposed from the sealing resin portion. The facing surfaces of the two first terminals have different area ratios, the facing surfaces of the two second terminals have different area ratios, and one of the first terminals is arranged adjacent to both the two second terminals.
Public/Granted literature
- US20220115302A1 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE Public/Granted day:2022-04-14
Information query
IPC分类: