- 专利标题: Interconnect structure
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申请号: US17808300申请日: 2022-06-22
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公开(公告)号: US12033956B2公开(公告)日: 2024-07-09
- 发明人: Ting-Cih Kang , Hsih-Yang Chiu
- 申请人: NANYA TECHNOLOGY CORPORATION
- 申请人地址: TW New Taipei
- 专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人: NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址: TW New Taipei
- 代理机构: CKC & Partners Co., LLC
- 分案原申请号: US17105480 2020.11.25
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L23/522 ; H01L23/552
摘要:
An interconnect structure includes first, second, and third insulating layers, first, second, and third conductive lines, and first, second, third, and fourth conductive vias. The first conductive line is embedded in the first insulating layer. The second conductive line is embedded in the second insulating layer and comprises a first portion, a second portion, and a third portion. The third conductive line is embedded in the third insulating layer. The first and second conductive via are embedded in the first insulating layer. The third and fourth conductive via are embedded in the second insulating layer. A first cross-sectional area surrounded by the first conductive line, the first conductive via, the second conductive via, the first portion, and the second portion is substantially equal to a second cross-sectional area surrounded by the first portion, the third portion, the third conductive via, the fourth conductive via, and the third conductive line.
公开/授权文献
- US20220320009A1 INTERCONNECT STRUCTURE 公开/授权日:2022-10-06
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