- 专利标题: Method and apparatus for optimization of lithographic process
-
申请号: US17381817申请日: 2021-07-21
-
公开(公告)号: US12044981B2公开(公告)日: 2024-07-23
- 发明人: Marc Hauptmann , Everhardus Cornelis Mos , Weitian Kou , Alexander Ypma , Michiel Kupers , Hyunwoo Yu , Min-Sub Han
- 申请人: ASML NETHERLANDS B.V.
- 申请人地址: NL Veldhoven
- 专利权人: ASML NETHERLANDS B.V.
- 当前专利权人: ASML NETHERLANDS B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman, LLP
- 优先权: EP 168801 2017.04.28
- 主分类号: G03F7/00
- IPC分类号: G03F7/00 ; G03F9/00
摘要:
A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.
公开/授权文献
信息查询