公开(公告)号：US12189302B2

公开(公告)日：2025-01-07

申请号：US17738093

申请日：2022-05-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Bart Peter Bert Segers ,  Everhardus Cornelis Mos ,  Emil Peter Schmitt-Weaver ,  Yichen Zhang ,  Petrus Gerardus Van Rhee ,  Xing Lan Liu ,  Maria Kilitziraki ,  Reiner Maria Jungblut ,  Hyunwoo Yu

IPC: G03F7/07 ,  G03F7/00 ,  G06F30/20 ,  G06N3/02 ,  G06F119/18 ,  G06F119/22

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US11347150B2

公开(公告)日：2022-05-31

申请号：US17197167

申请日：2021-03-10

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Bart Peter Bert Segers ,  Everhardus Cornelis Mos ,  Emil Peter Schmitt-Weaver ,  Yichen Zhang ,  Petrus Gerardus Van Rhee ,  Xing Lan Liu ,  Maria Kilitziraki ,  Reiner Maria Jungblut ,  Hyunwoo Yu

IPC: G03F7/00 ,  G06N3/02 ,  G03F7/20

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US12044981B2

公开(公告)日：2024-07-23

申请号：US17381817

申请日：2021-07-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc Hauptmann ,  Everhardus Cornelis Mos ,  Weitian Kou ,  Alexander Ypma ,  Michiel Kupers ,  Hyunwoo Yu ,  Min-Sub Han

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/70525 ,  G03F7/7085 ,  G03F9/7003

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

公开(公告)号：US10990018B2

公开(公告)日：2021-04-27

申请号：US16481143

申请日：2018-02-12

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Bart Peter Bert Segers ,  Everhardus Cornelis Mos ,  Emil Peter Schmitt-Weaver ,  Yichen Zhang ,  Petrus Gerardus Van Rhee ,  Xing Lan Liu ,  Maria Kilitziraki ,  Reiner Maria Jungblut ,  Hyunwoo Yu

IPC: G06F17/50 ,  G03F7/00 ,  G06N3/02 ,  G03F7/20

Abstract: A method, involving determining a first distribution of a first parameter associated with an error or residual in performing a device manufacturing process; determining a second distribution of a second parameter associated with an error or residual in performing the device manufacturing process; and determining a distribution of a parameter of interest associated with the device manufacturing process using a function operating on the first and second distributions. The function may include a correlation.

公开(公告)号：US20210349402A1

公开(公告)日：2021-11-11

申请号：US17381817

申请日：2021-07-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc HAUPTMANN ,  Everhardus Cornelis Mos ,  Weitian Kou ,  Alexander Ypma ,  Michiel Kupers ,  Hyunwoo Yu ,  Min-Sub Han

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.

公开(公告)号：US11099487B2

公开(公告)日：2021-08-24

申请号：US16495416

申请日：2018-03-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Marc Hauptmann ,  Everhardus Cornelis Mos ,  Weitian Kou ,  Alexander Ypma ,  Michiel Kupers ,  Hyunwoo Yu ,  Min-Sub Han

IPC: G03F7/20 ,  G03F9/00

Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.