发明授权
- 专利标题: Method for testing memory by built-in self-test storage space and related device
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申请号: US17595454申请日: 2020-10-15
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公开(公告)号: US12045150B2公开(公告)日: 2024-07-23
- 发明人: Heng-Chia Chang , Chuanqi Shi , Li Ding
- 申请人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 申请人地址: CN Hefei
- 专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人地址: CN Hefei
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 优先权: CN 2010166643.9 2020.03.11
- 国际申请: PCT/CN2020/121297 2020.10.15
- 国际公布: WO2021/179602A 2021.09.16
- 进入国家日期: 2021-11-17
- 主分类号: G06F11/00
- IPC分类号: G06F11/00 ; G06F11/07 ; G06F11/22 ; G06F11/27
摘要:
Embodiments of the present disclosure provide a memory test method and a device thereof, an electronic device, and a computer-readable storage medium, which relate to the field of semiconductor device testing technologies. The method is executed by a built-in self-test circuit and includes: acquiring defect information of a first memory by testing the first memory; acquiring repair information of the first memory based on the defect information of the first memory; and storing the repair information of the first memory in a second memory.
公开/授权文献
- US20220254437A1 METHOD FOR TESTING MEMORY AND RELATED DEVICE 公开/授权日:2022-08-11
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