- Patent Title: Semiconductor device having a gate contact over an active region
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Application No.: US17488235Application Date: 2021-09-28
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Publication No.: US12046670B2Publication Date: 2024-07-23
- Inventor: Zhixing Zhao , Manjunatha Prabhu , Shafiullah Syed
- Applicant: GLOBALFOUNDRIES U.S. Inc.
- Applicant Address: US NY Malta
- Assignee: GlobalFoundries U.S. Inc.
- Current Assignee: GlobalFoundries U.S. Inc.
- Current Assignee Address: US NY Malta
- Agent David Cain
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/417 ; H01L29/423
Abstract:
A semiconductor device comprising an active region, and a gate having side portions and a middle portion, whereby the middle portion is arranged between the side portions. The side portions and the middle portion of the gate may be arranged over the active region. The middle portion may be horizontally wider than the side portions. A first gate contact may be arranged over the middle portion.
Public/Granted literature
- US20230102787A1 SEMICONDUCTOR DEVICE HAVING A GATE CONTACT OVER AN ACTIVE REGION Public/Granted day:2023-03-30
Information query
IPC分类:
