- 专利标题: Roughness selectivity for MEMS movement stiction reduction
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申请号: US18308950申请日: 2023-04-28
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公开(公告)号: US12054382B2公开(公告)日: 2024-08-06
- 发明人: Hsi-Cheng Hsu , Kuo-Hao Lee , Jui-Chun Weng , Ching-Hsiang Hu , Ji-Hong Chiang , Lavanya Sanagavarapu , Chia-Yu Lin , Chia-Chun Hung , Jia-Syuan Li , Yu-Pei Chiang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Harrity & Harrity, LLP
- 分案原申请号: US17302484 2021.05.04
- 主分类号: B81B3/00
- IPC分类号: B81B3/00 ; B81C1/00
摘要:
A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.
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