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公开(公告)号：US12054382B2
公开(公告)日：2024-08-06
申请号：US18308950
申请日：2023-04-28
发明人： Hsi-Cheng Hsu , Kuo-Hao Lee , Jui-Chun Weng , Ching-Hsiang Hu , Ji-Hong Chiang , Lavanya Sanagavarapu , Chia-Yu Lin , Chia-Chun Hung , Jia-Syuan Li , Yu-Pei Chiang
CPC分类号： B81B3/0005 , B81C1/00968 , B81C2201/112 , B81C2201/115
摘要： A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.
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公开(公告)号：US20220348454A1
公开(公告)日：2022-11-03
申请号：US17852750
申请日：2022-06-29
发明人： Shyh-Wei Cheng , Chih-Yu Wang , Hsi-Cheng Hsu , Ji-Hong Chiang , Jui-Chun Weng , Shiuan-Jeng Lin , Wei-Ding Wu , Ching-Hsiang Hu
摘要： The present disclosure relates to a micro-electromechanical system (MEMS) structure including one or more semiconductor devices arranged on or within a first substrate and a MEMS substrate having an ambulatory element. The MEMS substrate is connected to the first substrate by a conductive bonding structure. A capping substrate is arranged on the MEMs substrate. The capping substrate includes a semiconductor material that is separated from the first substrate by the MEMS substrate. One or more conductive polysilicon vias include a polysilicon material that continuously extends from the conductive bonding structure, completely through the MEMS substrate, and to within the capping substrate. The semiconductor material of the capping substrate covers opposing sidewalls of the polysilicon material and an upper surface of the polysilicon material that is between the opposing sidewalls.
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公开(公告)号：US11655138B2
公开(公告)日：2023-05-23
申请号：US17302484
申请日：2021-05-04
发明人： Hsi-Cheng Hsu , Kuo-Hao Lee , Jui-Chun Weng , Ching-Hsiang Hu , Ji-Hong Chiang , Lavanya Sanagavarapu , Chia-Yu Lin , Chia-Chun Hung , Jia-Syuan Li , Yu-Pei Chiang
CPC分类号： B81B3/0005 , B81C1/00968 , B81C2201/112 , B81C2201/115
摘要： A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and/or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.
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公开(公告)号：US11742320B2
公开(公告)日：2023-08-29
申请号：US17249758
申请日：2021-03-11
发明人： Hsi-Cheng Hsu , Jui-Chun Weng , Ching-Hsiang Hu , Ji-Hong Chiang , Kuo-Hao Lee , Chia-Yu Lin , Chia-Chun Hung , Yen-Chieh Tu , Chien-Tai Su , Hsin-Yu Chen
IPC分类号： H01L23/00 , H01L23/544 , H01L25/065
CPC分类号： H01L24/94 , H01L23/544 , H01L23/562 , H01L24/32 , H01L25/0657
摘要： Alignment of devices formed on substrates that are to be bonded may be achieved through the use of scribe lines between the devices, where the scribe lines progressively increase or decrease in size from a center to an edge of one or more of the substrates to compensate for differences in the thermal expansion rates of the substrates. The devices on the substrates are brought into alignment as the substrates are heated during a bonding operation due to the progressively increased or decreased sizes of the scribe lines. The scribe lines may be arranged in a single direction in a substrate to compensate for thermal expansion along a single axis of the substrate or may be arranged in a plurality of directions to compensate for actinomorphic thermal expansion.
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