Invention Grant
- Patent Title: Low RA narrow base modified double magnetic tunnel junction structure
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Application No.: US17204403Application Date: 2021-03-17
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Publication No.: US12063868B2Publication Date: 2024-08-13
- Inventor: Daniel Worledge , Guohan Hu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H10N50/80
- IPC: H10N50/80 ; H10B61/00 ; H10N50/85
Abstract:
A modified double magnetic tunnel junction (mDMTJ) structure is provided which includes a narrow base and the use of a spin diffusion layer (i.e., non-magnetic, spin-conducting metallic layer) which gives a low resistance-area product (RA) for the tunnel barrier layer that forms an interface with the spin diffusion layer.
Public/Granted literature
- US20220302368A1 LOW RA NARROW BASE MODIFIED DOUBLE MAGNETIC TUNNEL JUNCTION STRUCTURE Public/Granted day:2022-09-22
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