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公开(公告)号：US20210118949A1
公开(公告)日：2021-04-22
申请号：US17135219
申请日：2020-12-28
Applicant: International Business Machines Corporation
Inventor： Daniel Worledge , Guohan Hu
Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the first magnetic free layer is composed of an ordered magnetic alloy. The ordered magnetic alloy provides a first magnetic free layer that has low moment, but is strongly magnetic. The use of such an ordered magnetic alloy first magnetic free layer in a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers.
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公开(公告)号：US10916581B2
公开(公告)日：2021-02-09
申请号：US16266232
申请日：2019-02-04
Applicant: International Business Machines Corporation
Inventor： Daniel Worledge , Guohan Hu
Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the first magnetic free layer is composed of an ordered magnetic alloy. The ordered magnetic alloy provides a first magnetic free layer that has low moment, but is strongly magnetic. The use of such an ordered magnetic alloy first magnetic free layer in a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the two magnetic free layers.
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公开(公告)号：US10804458B2
公开(公告)日：2020-10-13
申请号：US16242555
申请日：2019-01-08
Inventor： Guohan Hu , Younghyun Kim , Chandrasekara Kothandaraman , Jeong-Heon Park
Abstract: Memory devices and methods of forming the same include forming a memory stack over a bottom electrode. The memory stack has a free magnetic layer formed on the tunnel barrier layer. A first boron-segregating layer is formed directly on the free magnetic layer. An anneal is performed to cause boron to leave the free magnetic layer at an interface with the first boron-segregating layer. A top electrode is formed over the memory stack.
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公开(公告)号：US10686123B2
公开(公告)日：2020-06-16
申请号：US15999229
申请日：2018-08-16
Applicant: International Business Machines Corporation
Inventor： Guohan Hu , Daniel Worledge
Abstract: A multilayered magnetic free layer structure is provided that includes a first magnetic free layer and a second magnetic free layer separated by a non-magnetic layer in which the second magnetic free layer has higher magnetic damping (greater than 0.01) as compared with the first magnetic free layer. Such a multilayered magnetic free layer structure substantially reduces the switching current needed to reorient the magnetization of the magnetic free layers. The higher magnetic damping value of the second magnetic free layer as compared to the first magnetic free layer improves the switching speed of the magnetic free layers and thus reduces, and even eliminates, write errors.
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公开(公告)号：US10256399B2
公开(公告)日：2019-04-09
申请号：US15157834
申请日：2016-05-18
Inventor： Guohan Hu , Kwangseok Kim , Younghyun Kim , Jung-Hyuk Lee , Jeong-Heon Park
Abstract: A method for manufacturing a semiconductor device includes forming a magnetic tunnel junction (MTJ) structure comprising a magnetic fixed layer, a non-magnetic barrier layer and a magnetic free layer, and forming a metal oxide cap layer on the MTJ structure, wherein forming the metal oxide cap layer comprises depositing a metal layer on the magnetic free layer, performing an oxidation of the deposited metal layer to form an oxidized metal layer, and depositing a metal oxide layer on the oxidized metal layer.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20180358068A1
公开(公告)日：2018-12-13
申请号：US15802838
申请日：2017-11-03
Inventor： Guohan Hu , Jeong-Heon Park , Daniel C. Worledge
Abstract: Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.
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公开(公告)号：US09799826B2
公开(公告)日：2017-10-24
申请号：US15343651
申请日：2016-11-04
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01F10/329 , G11C11/161 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetoresistive random access memory (MRAM) devices include a first magnetic layer. A tunnel barrier layer is formed on the first magnetic layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. A second magnetic layer is formed on the tunnel barrier layer.
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8.发明申请公开(公告)号：US20170229642A1
公开(公告)日：2017-08-10
申请号：US15017001
申请日：2016-02-05
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Guohan Hu
Abstract: A magnetoresistive random access memory device (MRAM) device is described. The MRAM device has a stack arrangement in which a tunnel barrier layer is formed over a magnetizable reference layer, a metal layer is formed over the tunnel barrier layer, a free layer of a magnetizable material is formed over the metal layer, and an oxide layer is formed over the free layer as a cap layer. The resulting MRAM device has a thin free layer that exhibits a low magnetic moment.
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公开(公告)号：US09660180B2
公开(公告)日：2017-05-23
申请号：US15157467
申请日：2016-05-18
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Guohan Hu , Daniel C. Worledge
CPC classification number: H01F10/329 , G11C11/161 , H01L27/222 , H01L27/226 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12
Abstract: Magnetoresistive random access memory (MRAM) devices include a first magnetic layer. A tunnel barrier layer is formed on the first magnetic layer. The tunnel barrier includes first regions having a first thickness and second regions having a second thickness that is greater than the first thickness. A second magnetic layer is formed on the tunnel barrier layer.
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公开(公告)号：US20170110655A1
公开(公告)日：2017-04-20
申请号：US15390121
申请日：2016-12-23
Applicant: International Business Machines Corporation
Inventor： Guohan Hu , Luqiao Liu , Jonathan Z. Sun , Daniel C. Worledge
CPC classification number: G11C11/1675 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: Magnetic memory devices having an antiferromagnetic reference layer based on Co and Ir are provided. In one aspect, a magnetic memory device includes a reference magnetic layer having multiple Co-containing layers oriented in a stack, wherein adjacent Co-containing layers in the stack are separated by an Ir-containing layer such that the adjacent Co-containing layers in the stack are anti-parallel coupled by the Ir-containing layer therebetween; and a free magnetic layer separated from the reference magnetic layer by a barrier layer. A method of writing data to a magnetic random access memory device having at least one of the present magnetic memory cells is also provided.
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