Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US18200580Application Date: 2023-05-23
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Publication No.: US12068234B2Publication Date: 2024-08-20
- Inventor: Chun-Hung Chen , Ming-Tse Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2010965238.3 2020.09.15
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L21/48 ; H01L21/768 ; H01L23/00 ; H01L23/48 ; H01L23/498 ; H01L23/64 ; H01L27/01
Abstract:
A semiconductor structure includes an interposer substrate, an electronic device formed in a device region of the interposer substrate, a guard ring formed in the interposer substrate and surrounding the device region, a first redistribution layer on an upper surface of the interposer substrate and covering the device region and the guard ring, and a chip disposed on the first redistribution layer and overlapping the device region.
Public/Granted literature
- US20230290719A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2023-09-14
Information query
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