- 专利标题： Semiconductor device and manufacturing method thereof
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申请号： US17591690申请日： 2022-02-03
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公开(公告)号： US12074224B2公开(公告)日： 2024-08-27
- 发明人: Yoshinobu Asami , Yutaka Okazaki , Satoru Okamoto , Shinya Sasagawa
- 申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 申请人地址： JP Atsugi
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi
- 代理机构： Fish & Richardson P.C.
- 优先权： JP 15012713 2015.01.26 JP 15012718 2015.01.26 JP 15039161 2015.02.27 JP 15041682 2015.03.03 JP 15046870 2015.03.10 JP 15053100 2015.03.17
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; C23C16/40 ; C23C16/455 ; H01L21/475 ; H01L21/4757 ; H01L21/67 ; H01L27/12 ; H01L29/06 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L21/02
摘要：
A semiconductor device includes a first oxide insulating layer over a first insulating layer, an oxide semiconductor layer over the first oxide insulating layer, a source electrode layer and a drain electrode layer over the oxide semiconductor layer, a second insulating layer over the source electrode layer and the drain electrode layer, a second oxide insulating layer over the oxide semiconductor layer, a gate insulating layer over the second oxide insulating layer, a gate electrode layer over the gate insulating layer, and a third insulating layer over the second insulating layer, the second oxide insulating layer, the gate insulating layer, and the gate electrode layer. A side surface portion of the second insulating layer is in contact with the second oxide insulating layer. The gate electrode layer includes a first region and a second region. The first region has a width larger than that of the second region.
公开/授权文献
- US20220199831A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2022-06-23
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