- 专利标题： Multi-gate semiconductor device for memory and method for forming the same
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申请号： US17377790申请日： 2021-07-16
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公开(公告)号： US12075608B2公开(公告)日： 2024-08-27
- 发明人: Huai-Ying Huang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： WPAT LAW
- 代理商 Anthony King
- 主分类号： H10B10/00
- IPC分类号： H10B10/00 ; G11C11/412
摘要：
A memory device includes a first SRAM cell, a second SRAM cell, a first inter transistor and a second inter transistor. The first SRAM cell includes two first pull-up transistors, two first pull-down transistors, and two first pass-gate transistors. The second SRAM cell includes two second pull-up transistors, two second pull-down transistors, and two second pass-gate transistors. The first inter transistor and the second inter transistor are electrically connected to the first SRAM cell and the second SRAM cell.
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