Invention Grant
- Patent Title: Physical vapor deposition apparatus
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Application No.: US17395186Application Date: 2021-08-05
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Publication No.: US12077850B2Publication Date: 2024-09-03
- Inventor: Kuo-Lung Hou , Wei-Chen Liao , Ming-Hsien Lin
- Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: FOLEY & LARDNER LLP
- Main IPC: C23C14/54
- IPC: C23C14/54 ; C23C14/14 ; C23C14/35 ; H01J37/34

Abstract:
A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.
Public/Granted literature
- US20230041439A1 PHYSICAL VAPOR DEPOSITION APPARATUS Public/Granted day:2023-02-09
Information query
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