公开(公告)号：US20230041439A1

公开(公告)日：2023-02-09

申请号：US17395186

申请日：2021-08-05

Applicant: Taiwan Semiconductor Manufacturing Company Ltd.

Inventor： Kuo-Lung Hou ,  Wei-Chen Liao ,  Ming-Hsien Lin

IPC: C23C14/54 ,  C23C14/35 ,  C23C14/14

Abstract: A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.

公开(公告)号：US12077850B2

公开(公告)日：2024-09-03

申请号：US17395186

申请日：2021-08-05

Applicant: Taiwan Semiconductor Manufacturing Company Ltd.

Inventor： Kuo-Lung Hou ,  Wei-Chen Liao ,  Ming-Hsien Lin

IPC: C23C14/54 ,  C23C14/14 ,  C23C14/35 ,  H01J37/34

CPC classification number: C23C14/54 ,  C23C14/14 ,  C23C14/35 ,  H01J37/3476

Abstract: A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.

公开(公告)号：US12087625B2

公开(公告)日：2024-09-10

申请号：US17865320

申请日：2022-07-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Kuo-Lung Hou ,  Ming-Hsien Lin ,  Che-I Kuo ,  Yung Hsin Lu

IPC: C25D17/00 ,  C25D3/38 ,  C25D5/02 ,  H01L21/768

CPC classification number: H01L21/76873 ,  C25D3/38 ,  C25D5/02

Abstract: An apparatus for electroplating includes a cup configured to support a substrate, and a cone including at least three distance measuring devices arranged on a lower surface thereof and facing the substrate. Each distance measuring device is configured to transmit a laser pulse towards the substrate, the laser pulse impinging the substrate, receive a reflected laser pulse from the substrate, calculate a turnaround time of the laser pulse, and calculate a distance between the distance measuring device and the substrate using the turnaround time for determining an inclination of the substrate.

公开(公告)号：US12071699B2

公开(公告)日：2024-08-27

申请号：US17873136

申请日：2022-07-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Kuo-Lung Hou ,  Ming-Hsien Lin ,  Tsung-Cheng Wu

IPC: C25D21/12 ,  C25D5/54 ,  C25D7/12 ,  C25D17/00 ,  C25D21/00

CPC classification number: C25D21/12 ,  C25D5/54 ,  C25D7/12 ,  C25D17/001 ,  C25D21/00

Abstract: An electrochemical plating apparatus for depositing a conductive material on a wafer includes a cell chamber. The plating solution is provided from a bottom of the cell chamber into the cell chamber. A plurality of openings passes through a sidewall of the cell chamber. A flow regulator is arranged with each of the plurality of openings configured to regulate an overflow amount of the plating solution flowing out through the each of the plurality of openings. The electrochemical plating apparatus further comprises a controller to control the flow regulator such that overflow amounts of the plating solution flowing out through the plurality of openings are substantially equal to each other.